BD539B
Overview
DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Complement to Type BD540B Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BD539B
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 186.68 KB
Datasheets by Manufacturer
- BD539B — Power Innovations Limited — NPN SILICON POWER TRANSISTORS
- BD539A — Power Innovations Limited — NPN SILICON POWER TRANSISTORS
- BD539C — Power Innovations Limited — NPN SILICON POWER TRANSISTORS
- BD539D — Power Innovations Limited — NPN SILICON POWER TRANSISTORS
- BD53xx — Unknown Manufacturer — VOLTAGE DETECTOR IC