BD539B NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD539B .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Complement to Type BD540B. M.

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Datasheet Specifications

Part number: BD539B
Manufacturer: INCHANGE
File Size: 186.68 KB
Datasheet: BD539B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power

BD539B Distributors

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BD539B NPN Transistor INCHANGE

INCHANGE BD539B-like datasheet