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BD539B NPN Transistor

BD539B Description

isc Silicon NPN Power Transistor BD539B .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Complement to Type BD540B. M.

BD539B Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power

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Datasheet Details

Part number
BD539B
Manufacturer
INCHANGE
File Size
186.68 KB
Datasheet
BD539B-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD539B-like datasheet