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BD651

NPN Transistor

BD651 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
*High DC Current Gain : hFE= 750(Min) @IC= 3A
*Low Saturation Voltage
*Complement to Type BD652
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use as c.

BD651 Datasheet (190.35 KB)

Preview of BD651 PDF

Datasheet Details

Part number:

BD651

Manufacturer:

INCHANGE

File Size:

190.35 KB

Description:

Npn transistor.

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