Datasheet4U Logo Datasheet4U.com

BD651 - NPN Transistor

📥 Download Datasheet

Preview of BD651 PDF
datasheet Preview Page 2

Datasheet Details

Part number BD651
Manufacturer INCHANGE
File Size 190.35 KB
Description NPN Transistor
Datasheet download datasheet BD651-INCHANGE.pdf

BD651 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain : hFE= 750(Min) @IC= 3A Low Saturation Voltage Complement to Type BD652 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VE

📁 BD651 Similar Datasheet

  • BD6510F - High-Side Switch (Rohm)
  • BD6512F - High-Side Switch (Rohm)
  • BD6513F - High-Side Switch (Rohm)
  • BD6516F - High-Side Switch (Rohm)
  • BD6517F - High-Side Switch (Rohm)
  • BD6519FJ - High-Side Switch (Rohm)
  • BD650 - PNP SILICON POWER DARLINGTONS (Bourns Electronic Solutions)
  • BD650CS - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
Other Datasheets by INCHANGE
Published: |