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BD651F NPN Transistor

BD651F Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD651F .
High DC Current Gain. Low Saturation Voltage. Complement to Type BD652F. Minimum Lot-to-Lot variations for robust device performance.

BD651F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IC

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Datasheet Details

Part number
BD651F
Manufacturer
INCHANGE
File Size
209.73 KB
Datasheet
BD651F-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD651F-like datasheet