BD651F NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD651F .
High DC Current Gain. Low Saturation Voltage. Complement to Type BD652F. Minimum Lot-to-Lot variations for robust device performance.

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Datasheet Specifications

Part number: BD651F
Manufacturer: INCHANGE
File Size: 209.73 KB
Datasheet: BD651F-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IC

BD651F Distributors

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BD651F NPN Transistor INCHANGE

INCHANGE BD651F-like datasheet