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BD652F PNP Transistor

BD652F Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD652F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD651F.

BD652F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

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Datasheet Details

Part number
BD652F
Manufacturer
INCHANGE
File Size
209.59 KB
Datasheet
BD652F-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD652F-like datasheet