Datasheet Details
- Part number
- BD650F
- Manufacturer
- INCHANGE
- File Size
- 210.43 KB
- Datasheet
- BD650F-INCHANGE.pdf
- Description
- PNP Transistor
BD650F Description
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min).
High DC Current Gain.
Low Saturation Voltage.
Complement to Type BD649F.
BD650F Applications
* Designed for use as complementary AF push-pull output
stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
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