Datasheet4U Logo Datasheet4U.com

BD650F - PNP Transistor

BD650F Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD649F.

BD650F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

📥 Download Datasheet

Preview of BD650F PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD650F
Manufacturer
INCHANGE
File Size
210.43 KB
Datasheet
BD650F-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • BD650 - PNP SILICON POWER DARLINGTONS (Bourns Electronic Solutions)
  • BD650CS - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
  • BD650CT - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
  • BD651 - NPN SILICON POWER DARLINGTONS (Bourns Electronic Solutions)
  • BD6510F - High-Side Switch (Rohm)
  • BD6512F - High-Side Switch (Rohm)
  • BD6513F - High-Side Switch (Rohm)
  • BD6516F - High-Side Switch (Rohm)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE BD650F-like datasheet