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BD650F - PNP Transistor

BD650F Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD649F.

BD650F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

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Datasheet Details

Part number
BD650F
Manufacturer
INCHANGE
File Size
210.43 KB
Datasheet
BD650F-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE BD650F-like datasheet