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BD652 PNP Transistor

BD652 Description

isc Silicon PNP Darlington Power Transistor BD652 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain : hFE= 750(Min) @IC= -3A. Low Saturation Voltage. C.

BD652 Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

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Datasheet Details

Part number
BD652
Manufacturer
INCHANGE
File Size
190.60 KB
Datasheet
BD652-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD652-like datasheet