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BD680 PNP Transistor

BD680 Description

isc Silicon PNP Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -80V. DC Current Gain. : hFE = 750(Min) @ IC= -1. Complemen.

BD680 Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-

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Datasheet Details

Part number
BD680
Manufacturer
INCHANGE
File Size
186.10 KB
Datasheet
BD680-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD680-like datasheet