BDX77F NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min). Complement to Type BDX78F. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: BDX77F
Manufacturer: INCHANGE
File Size: 210.17 KB
Datasheet: BDX77F-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 80 V 5 V IC Collector Current-Con

BDX77F Distributors

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BDX77F NPN Transistor INCHANGE

INCHANGE BDX77F-like datasheet