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BDX75 NPN Transistor

BDX75 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min). High Current Capability. 100% avalanche tested. Minimum Lot-to-Lot variat.

BDX75 Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Colle

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Datasheet Details

Part number
BDX75
Manufacturer
INCHANGE
File Size
204.63 KB
Datasheet
BDX75-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDX75-like datasheet