BDX73 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operatio.

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Datasheet Specifications

Part number: BDX73
Manufacturer: Inchange Semiconductor
File Size: 211.35 KB
Datasheet: BDX73-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current

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BDX73 Silicon NPN Power Transistor Inchange Semiconductor

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