BDX53F Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor BDX53F .
Collector Current -IC= 8A. High DC Current Gain- : hFE= 500(Min)@ IC= 2A. Complement to Type BDX54F. Minimum Lot-to-Lot variations fo.

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Datasheet Specifications

Part number: BDX53F
Manufacturer: Inchange Semiconductor
File Size: 211.85 KB
Datasheet: BDX53F-InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCER Collector-Emitter Voltage 160 VCEO Collector-Emitter Voltage 160 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak

BDX53F Distributors

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BDX53F Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor BDX53F-like datasheet