Datasheet4U Logo Datasheet4U.com

BDX53F - Silicon NPN Darlington Power Transistor

BDX53F Description

isc Silicon NPN Darlington Power Transistor BDX53F .
Collector Current -IC= 8A. High DC Current Gain- : hFE= 500(Min)@ IC= 2A. Complement to Type BDX54F. Minimum Lot-to-Lot variations fo.

BDX53F Applications

* Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCER Collector-Emitter Voltage 160 VCEO Collector-Emitter Voltage 160 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak

📥 Download Datasheet

Preview of BDX53F PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDX53F
Manufacturer
Inchange Semiconductor
File Size
211.85 KB
Datasheet
BDX53F-InchangeSemiconductor.pdf
Description
Silicon NPN Darlington Power Transistor

📁 Related Datasheet

  • BDX53 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX53A - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX53B - Plastic Medium-Power Complementary Silicon Transistors (Motorola Inc)
  • BDX53BFP - SILICON POWER DARLINGTON TRANSISTOR (ST Microelectronics)
  • BDX53BG - Plastic Medium-Power Complementary Silicon Transistors (ON Semiconductor)
  • BDX53C - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
  • BDX53CG - Plastic Medium-Power Complementary Silicon Transistors (ON Semiconductor)
  • BDX54 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)

📌 All Tags

Inchange Semiconductor BDX53F-like datasheet