BDX33D Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor BDX33D .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Low Collector Saturation Volt.

📥 Download Datasheet

BDX33D Datasheet Preview — Preview of BDX33D PDF

Datasheet Specifications

Part number: BDX33D
Manufacturer: Inchange Semiconductor
File Size: 214.36 KB
Datasheet: BDX33D-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10

BDX33D Distributors

📁 Related Datasheet

BDX33 BDX33A BDX33B BDX33C BDX30 BDX34

📌 All Tags

BDX33D Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BDX33D-like datasheet