Datasheet Details
- Part number
- BDX33D
- Manufacturer
- Inchange Semiconductor
- File Size
- 214.36 KB
- Datasheet
- BDX33D-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
BDX33D Description
isc Silicon NPN Darlington Power Transistor BDX33D .
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min).
High DC Current Gain
: hFE= 750(Min) @IC= 3A.
Low Collector Saturation Volt.
BDX33D Applications
* Designed for general purpose amplifier and low speed
switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
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