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BDX33D - Silicon NPN Power Transistor

BDX33D Description

isc Silicon NPN Darlington Power Transistor BDX33D .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Low Collector Saturation Volt.

BDX33D Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10

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Datasheet Details

Part number
BDX33D
Manufacturer
Inchange Semiconductor
File Size
214.36 KB
Datasheet
BDX33D-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BDX33D-like datasheet