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BFG193 - NPN Transistor

Datasheet Summary

Description

NF = 1.3 dB TYP.

︱S21e︱2 = 13.5 dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplif

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Datasheet Details

Part number BFG193
Manufacturer INCHANGE
File Size 205.21 KB
Description NPN Transistor
Datasheet download datasheet BFG193 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous 20 V 20 V 12 V 2 V 80 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 mA 0.
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