Datasheet4U Logo Datasheet4U.com

BFG520 - NPN Transistor

Datasheet Summary

Description

NF = 1.3 dB TYP.

︱S21︱2 =16dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers

📥 Download Datasheet

Datasheet preview – BFG520

Datasheet Details

Part number BFG520
Manufacturer INCHANGE
File Size 234.46 KB
Description NPN Transistor
Datasheet download datasheet BFG520 Datasheet
Additional preview pages of the BFG520 datasheet.

📁 Similar Datasheet

  • BFG520 - NPN 9GHz wideband transistor (NXP)
  • BFG520W - NPN 9 GHz wideband transistors (NXP)
  • BFG505 - NPN 9 GHz wideband transistors (NXP)
  • BFG505W - NPN 9 GHz wideband transistors (NXP)
  • BFG540 - NPN 9GHz wideband transistor (NXP)
  • BFG540 - NPN 9GHz Wideband Transistor (Kexin)
  • BFG540-X - NPN 9GHz wideband transistor (NXP)
  • BFG540-XR - NPN 9GHz wideband transistor (NXP)
  • BFG540W - NPN 9 GHz wideband transistor (NXP)
  • BFG540X - NPN 9 GHz wideband transistor (Philips)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BFG520 VALUE 20 15 2.5 70 0.3 150 -65~150 UNIT V V V mA W ℃ ℃ isc website：www.iscsemi.
Published: |