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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
NPN 9 GHz wideband transistor
FEATURES
• High power gain • Low noise figure • High transition frequency • Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.
The transistors are mounted in plastic SOT143B and SOT143R packages.
PINNING
PIN DESCRIPTION BFG540 (Fig.
BFG540XR Datasheet
