BFG505 - NPN 9 GHz wideband transistors
BFG505 BFG505/X collector base emitter emitter collector emitter base emitter DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.
MARKING TYPE NUMBER BFG505 BFG505/X CODE %ME %MK handbook, 2 c4olumns 3 1 Top view 2 MSB014 Fig.1 Simplified
BFG505 Features
* High power gain
* Low noise figure
* High transition frequency
* Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), ra
