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BFG505 - NPN 9 GHz wideband transistors

Datasheet Summary

Description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Datasheet preview – BFG505

Datasheet Details

Part number BFG505
Manufacturer NXP
File Size 291.59 KB
Description NPN 9 GHz wideband transistors
Datasheet download datasheet BFG505 Datasheet
Additional preview pages of the BFG505 datasheet.

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Full PDF Text Transcription

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NXP Semiconductors NPN 9 GHz wideband transistors Product specification BFG505; BFG505/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). PINNING PIN 1 2 3 4 DESCRIPTION BFG505 BFG505/X collector base emitter emitter collector emitter base emitter DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG505 BFG505/X CODE %ME %MK handbook, 2 c4olumns 3 1 Top view 2 MSB014 Fig.1 Simplified outline SOT143B.
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