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BFG135A - NPN Silicon RF Transistor

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BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 135A BFG135A Q62702-F1322 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 150 20 mW 1000 150 - 65 ... + 150 - 65 ...