BFG11 - NPN 2 GHz RF power transistor
NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package.
MARKING TYPE NUMBER BFG11 BFG11/X CODE N72 N73 DESCRIPTION handbook, 2 columns 4 3 2 MSB014 BFG11/X (see Fig.1) 1 2 3 4 collector emitter base emitter Fig.1 SOT143.
QUICK REFERENCE DATA RF per
BFG11 Features
* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area
* Gold metallization ensures excellent reliability. APPLICATIONS
* Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN
