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BFG11 - NPN 2 GHz RF power transistor

BFG11 Description

DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product speciļ¬cation Supersedes data of November 1992 File under Dis.
NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package.

BFG11 Features

* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area

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