BFG16A Datasheet | NXP Semiconductors

FEATURES - High power gain - Good thermal stability - Gold metallization ensures excellent reliability. DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes. Top view PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter fpage MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE f T GUM Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 110 °C; note 1 open emitter open base open collector CONDITIONS MIN. - - - - - - 65 - MAX. 40 25 2 150 1 +150 150 UNIT V V V m A W °C °C PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 110 °C; note 1 IC = 150 m A; VCE = 5 V; Tj = 25 °C IC = 100 m A; VCE = 10 V; f = 500 MHz; Tamb = 25 °C IC = 100 m A; VCE = 10 V; f = 500 MHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. - - - - 25 - - TYP. - - - - 80 1.5 10 MAX. 40 25 150 1 - - - GHz d B UNIT V V m A W 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO h FE Cc Ce Cre f T GUM Note PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector cut-off current DC current gain collector capacitance emitter capacitance...