BFG11W Datasheet - NXP

BFG11W NPN 2 GHz power transistor

NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 4 3 MBK523 Fig.1 Simplified outline. QUICK REFERENCE DATA RF pe.

BFG11W Features

* High power gain

* High efficiency

* Small size discrete power amplifier

* 1.9 GHz operating area

* Gold metallization ensures excellent reliability

* Linear and non-linear operation. APPLICATIONS

* Common emitter class-AB operation in handhel

BFG11W_PhilipsSemiconductors.pdf