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BFG11W Datasheet - NXP

BFG11W - NPN 2 GHz power transistor

NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 4 3 MBK523 Fig.1 Simplified outline.

QUICK REFERENCE DATA RF pe

BFG11W Features

* High power gain

* High efficiency

* Small size discrete power amplifier

* 1.9 GHz operating area

* Gold metallization ensures excellent reliability

* Linear and non-linear operation. APPLICATIONS

* Common emitter class-AB operation in handhel

BFG11W_PhilipsSemiconductors.pdf

Preview of BFG11W PDF
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Datasheet Details

Part number:

BFG11W

Manufacturer:

NXP ↗

File Size:

98.04 KB

Description:

Npn 2 ghz power transistor.

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