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BFG11W NPN 2 GHz power transistor

NXP

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product speciﬁcation Supersedes data of September 1995 File under Discrete Se.
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

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Datasheet Specifications

Part number: BFG11W
Manufacturer: NXP ↗
File Size: 98.04 KB
Datasheet: BFG11W_PhilipsSemiconductors.pdf
Description: NPN 2 GHz power transistor

Features

* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area
* Gold metallization ensures excellent reliability

Applications

* Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.

BFG11W Distributors

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BFG11W NPN GHz power transistor NXP

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