BFG11W - NPN 2 GHz power transistor
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.
Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 4 3 MBK523 Fig.1 Simplified outline.
QUICK REFERENCE DATA RF pe
BFG11W Features
* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area
* Gold metallization ensures excellent reliability
* Linear and non-linear operation. APPLICATIONS
* Common emitter class-AB operation in handhel
