Datasheet4U Logo Datasheet4U.com

BFG11W - NPN 2 GHz power transistor

BFG11W Description

DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product speciļ¬cation Supersedes data of September 1995 File under Discrete Se.
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

BFG11W Features

* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area
* Gold metallization ensures excellent reliability

BFG11W Applications

* Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.

📥 Download Datasheet

Preview of BFG11W PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BFG135A - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG193 - NPN Transistor (INCHANGE)
  • BFG194 - PNP Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG196 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG198 - NPN TRANSISTOR (UTC)
  • BFG19S - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG235 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG325XR - NPN 14 GHz wideband transistor (NXP Semiconductors)

📌 All Tags

NPN GHz power transistor NXP
NXP BFG11W-like datasheet