Datasheet Details
- Part number
- BFG11W
- Manufacturer
- NXP ↗
- File Size
- 98.04 KB
- Datasheet
- BFG11W_PhilipsSemiconductors.pdf
- Description
- NPN 2 GHz power transistor
BFG11W Description
DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product speciļ¬cation Supersedes data of September 1995 File under Discrete Se.
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.
BFG11W Features
* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area
* Gold metallization ensures excellent reliability
BFG11W Applications
* Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
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