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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10; BFG10/X NPN 2 GHz RF power transistor
Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION
BFG10; BFG10/X
BFG10 (see Fig.1) 1 2 3 4 collector base emitter emitter
handbook, 2 columns 4
3
1 Top view
2
MSB014
BFG10/X (see Fig.
BFG10 Datasheet
