Part number: BFG10W
Manufacturer: NXP (https://www.nxp.com/)
File Size: 55.89KB
Download: 📄 Datasheet
Description: UHF power transistor
The BFG10W is a silicon NPN wideband microwave transistor manufactured by NXP Semiconductors. It is commonly used in high-frequency applications such as wireless communication systems, radar systems, and other RF amplification circuits. The transistor features high power gain and excellent linearity, making it suitable for applications that require low noise and high power output..
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
PINNING
PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter
fpage
4
3
1 Top view
2
MBK523
Marking code: T5.
Fig.1 SOT343.
QUICK REFERENCE .
* High efficiency
* Small size discrete power amplifier
* 900 MHz and 1.9 GHz operating
areas
* Gold metallization ensures
excellent reliability.
APPLICAT.
* Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.
DESCRIPTION NPN silicon planar epit.
Image gallery
TAGS
📁 Related Datasheet
BFG10 - NPN 2 GHz RF power transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10; BFG10/X NPN 2 GHz RF power transistor
Product specification Supersedes data of 1995 Mar 07 File under Discr.
BFG10X - UHF power transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X UHF power transistor
Product specification File under Discrete Semiconductors, SC14 1995 Sep 22
Philips .
BFG11 - NPN 2 GHz RF power transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X NPN 2 GHz RF power transistor
Product specification Supersedes data of November 1992 File under Dis.
BFG11W - NPN 2 GHz power transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11W/X NPN 2 GHz power transistor
Product specification Supersedes data of September 1995 File under Discrete Se.
BFG135 - NPN 7GHz wideband transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG135 NPN 7GHz wideband transistor
Product specification
1995 Sep 13
NXP Semiconductors
NPN 7GHz wideband tran.
BFG135A - NPN Silicon RF Transistor
(Siemens Semiconductor Group)
BFG 135A
NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at col.
BFG135A - NPN Silicon RF Transistor
(Infineon Technologies AG)
BFG 135A
NPN Silicon RF Transistor
For low-distortion broadband amplifier
4
stages in antenna and telecommunication systems up to 2 GHz at collect.
BFG16A - NPN 2 GHz wideband transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG16A NPN 2 GHz wideband transistor
Product specification Supersedes data of November 1992 File under Discrete Se.
BFG17A - NPN 3 GHz wideband transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG17A NPN 3 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 1995 Sep 12
P.
BFG193 - NPN Transistor
(INCHANGE)
isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 13.5 dB TYP. @V.
