BFG520W - NPN 9 GHz wideband transistors
PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
1 2 MBK523 MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VC
BFG520W Features
* High power gain
* Low noise figure
* High transition frequency
* Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, D
