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BFG520W - NPN 9 GHz wideband transistors

Datasheet Summary

Description

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Datasheet Details

Part number BFG520W
Manufacturer NXP
File Size 154.24 KB
Description NPN 9 GHz wideband transistors
Datasheet download datasheet BFG520W Datasheet
Additional preview pages of the BFG520W datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG520W; BFG520W/X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.
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