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BFG590X - NPN 5 GHz wideband transistors

This page provides the datasheet information for the BFG590X, a member of the BFG590 NPN 5 GHz wideband transistors family.

Datasheet Summary

Description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Datasheet preview – BFG590X

Datasheet Details

Part number BFG590X
Manufacturer Philips
File Size 254.27 KB
Description NPN 5 GHz wideband transistors
Datasheet download datasheet BFG590X Datasheet
Additional preview pages of the BFG590X datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors NPN 5 GHz wideband transistors Product specification BFG590; BFG590/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.
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