BFR106 Datasheet - INCHANGE

BFR106, NPN Transistor

isc Silicon NPN RF Transistor DESCRIPTION *Low Noise Figure NF = 2.5 dB TYP.
@VCE = 8 V, IC = 20 mA, f = 900 MHz *High Gain ︱S21e︱2 = 10.5 dB

Applications

* Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage 20 V 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3

BFR106-INCHANGE.pdf