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BFR520 NPN Transistor

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Description

isc Silicon NPN RF Transistor .
High Power Gain. High Current Gain Bandwidth Product. Low Noise Figure. Minimum Lot-to-Lot variations for robust device performance a.

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Datasheet Specifications

Part number
BFR520
Manufacturer
INCHANGE
File Size
199.85 KB
Datasheet
BFR520-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2

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