IPB50R199CP
INCHANGE
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N-channel mosfet.
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IPB50R199CP - Power Transistor
(Infineon)
CoolMOSTM Power Transistor
Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.
IPB50R140CP - Power Transistor
(Infineon)
9?3,'@(+'4?
4VVS=>AB= # : A 0<& < ,9 = 4 = > :<
7LHZ[XLY X *FN
IPB50R140CP - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.
IPB50R250CP - Power Transistor
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9?3,'@),'4?
4VVS=>AB= # : A 0<& < ,9 = 4 = > :<
7LHZ[XLY W *FMK H < F=D
IPB50R250CP - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.
IPB50R299CP - Power Transistor
(Infineon)
IPB50R299CP
CoolMOSTM Power Transistor
Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current c.
IPB50R299CP - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.
IPB50CN10NG - Power Transistor
(Infineon)
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$ ;B 1 ='=-: >5>?;=
7MI[\YMZ S)
5: 3 @@7> @A D?3 >>7H7> S J57>>7@F93 F7 5: 3 D97 J'
IPB50N10S3L-16 - Power Transistor
(Infineon)
IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max (SMD version) ID 100 15.4 50 PG-TO262-3-.
IPB530N15N3 - Power Transistor
(Infineon)
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
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Features • N-channel, normal level • Excellent gate charge x R DS.
