Datasheet4U Logo Datasheet4U.com

IPI65R110CFD

N-Channel MOSFET

IPI65R110CFD Features

* Static drain-source on-resistance: RDS(on) ≤0.11Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching SJ MOSFET while of

IPI65R110CFD General Description


*Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 31.2 A IDM Dra.

IPI65R110CFD Datasheet (267.01 KB)

Preview of IPI65R110CFD PDF

Datasheet Details

Part number:

IPI65R110CFD

Manufacturer:

INCHANGE

File Size:

267.01 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPI65R110CFD MOSFET (Infineon)

IPI65R150CFD MOSFET (Infineon)

IPI65R150CFD N-Channel MOSFET (INCHANGE)

IPI65R190C6 Power Transistor (Infineon Technologies)

IPI65R190C6 N-Channel MOSFET (INCHANGE)

IPI65R190CFD CFD2 Power Transistor (Infineon Technologies)

IPI65R190CFD N-Channel MOSFET (INCHANGE)

IPI65R190E6 Power Transistor (Infineon Technologies)

IPI65R190E6 N-Channel MOSFET (INCHANGE)

IPI65R065C7 MOSFET (Infineon)

TAGS

IPI65R110CFD N-Channel MOSFET INCHANGE

Image Gallery

IPI65R110CFD Datasheet Preview Page 2

IPI65R110CFD Distributor