IPI65R110CFD - N-Channel MOSFET

INCHANGE

IPI65R110CFD Datasheet Preview — Preview of IPI65R110CFD PDF

Datasheet Details

Part number	IPI65R110CFD
Manufacturer	INCHANGE
File Size	267.01 KB
Description	N-Channel MOSFET
Datasheet	IPI65R110CFD-INCHANGE.pdf

IPI65R110CFD Product details

Description

Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 31.2 A IDM Drain Current-Single Pulsed 99.6 A PD Total Dissipation @TC=25℃ 277.8 W Tj Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL

Features

Static drain-source on-resistance: RDS(on) ≤0.11Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 IPI65R110CFD Similar Datasheet

IPI65R150CFD - MOSFET (Infineon)
IPI65R190C6 - Power Transistor (Infineon Technologies)
IPI65R190CFD - CFD2 Power Transistor (Infineon Technologies)
IPI65R190E6 - Power Transistor (Infineon Technologies)
IPI65R065C7 - MOSFET (Infineon)
IPI65R099C6 - MOSFET (Infineon)
IPI65R280C6 - Power Transistor (Infineon Technologies)
IPI65R280E6 - Power Transistor (Infineon Technologies)

Other Datasheets by INCHANGE

IPI65R310CFD - N-Channel MOSFET
IPI65R380C6 - N-Channel MOSFET
IPI65R420CFD - N-Channel MOSFET
IPI65R600C6 - N-Channel MOSFET
IPI65R660CFD - N-Channel MOSFET
IPI600N25N3 - N-Channel MOSFET

Published: Oct 29, 2020 |