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IPI65R190C6

N-Channel MOSFET

IPI65R190C6 Features

* Static drain-source on-resistance: RDS(on) ≤0.19Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching SJ MOSFET while no

IPI65R190C6 General Description


*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pul.

IPI65R190C6 Datasheet (282.17 KB)

Preview of IPI65R190C6 PDF

Datasheet Details

Part number:

IPI65R190C6

Manufacturer:

INCHANGE

File Size:

282.17 KB

Description:

N-channel mosfet.

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IPI65R190C6 N-Channel MOSFET INCHANGE

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