IPP076N15N5 - N-Channel MOSFET
IPP076N15N5 Features
* Static drain-source on-resistance: RDS(on) ≤7.6mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Ideal for high-frequency switching and synchronous rectific
