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IRF1503 N-Channel MOSFET

IRF1503 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1503， IIRF1503 *.

IRF1503 Features

* Static drain-source on-resistance: RDS(on) ≤3.3mΩ
* Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* reliable device for

IRF1503 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 960 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRF1503
Manufacturer
INCHANGE
File Size
241.50 KB
Datasheet
IRF1503-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF1503-like datasheet