IRFB7530 Datasheet - INCHANGE

IRFB7530, N-Channel MOSFET

isc N-Channel MOSFET Transistor IRFB7530,IIRFB7530 *

Features

* Static drain-source on-resistance: RDS(on) ≤2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 944 PD Total Dissipation @TC=25℃ 375 Tj Max.
Operating Junction Temperature 175 Tstg Storage T

IRFB7530-INCHANGE.pdf