IRFBE30 - N-Channel MOSFET
IRFBE30 Features
* Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX)
* Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE M
