IRFBE30 N-Channel MOSFET

INCHANGE

Description

iscN-Channel MOSFET Transistor IRFBE30 *.

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Datasheet Specifications

Part number: IRFBE30
Manufacturer: INCHANGE
File Size: 279.38 KB
Datasheet: IRFBE30-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX)
* Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE M

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IRFBE30 N-Channel MOSFET INCHANGE

INCHANGE IRFBE30-like datasheet