Datasheet Details
- Part number
- IRFBE30
- Manufacturer
- INCHANGE
- File Size
- 279.38 KB
- Datasheet
- IRFBE30-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRFBE30 Description
iscN-Channel MOSFET Transistor IRFBE30 *.
IRFBE30 Features
* Low drain-source on-resistance:
RDS(ON) =3.0Ω (MAX)
* Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE M
IRFBE30 Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
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