Datasheet Details
- Part number
- IRFBG20
- Manufacturer
- INCHANGE
- File Size
- 279.16 KB
- Datasheet
- IRFBG20-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRFBG20 Description
iscN-Channel MOSFET Transistor IRFBG20 *.
IRFBG20 Features
* Low drain-source on-resistance:
RDS(ON) = 11Ω (MAX)
* Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE M
IRFBG20 Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
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