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IRFR9024N - P-Channel MOSFET

IRFR9024N Description

isc P-Channel MOSFET Transistor *.

IRFR9024N Features

* Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRFR9024N Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -11 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -55~150

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Datasheet Details

Part number
IRFR9024N
Manufacturer
INCHANGE
File Size
260.32 KB
Datasheet
IRFR9024N-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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