Datasheet4U Logo Datasheet4U.com

IRFR9N20D Datasheet - INCHANGE

N-Channel MOSFET

IRFR9N20D Features

* Static drain-source on-resistance: RDS(on)≤380mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* High frequency DC-DC converters

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME

IRFR9N20D Datasheet (238.60 KB)

Preview of IRFR9N20D PDF

Datasheet Details

Part number:

IRFR9N20D

Manufacturer:

INCHANGE

File Size:

238.60 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IRFR9N20D Power MOSFET (IRF)

IRFR9N20DPBF HEXFET Power MOSFET (International Rectifier)

IRFR9010 (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET (Samsung Electronics)

IRFR9010 P-Channel Transistor (International Rectifier)

IRFR9010 Power MOSFET (Vishay)

IRFR9012 P-Channel Transistor (International Rectifier)

IRFR9014 Power MOSFET (IRF)

IRFR9014 (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET (Samsung Electronics)

IRFR9014 Power MOSFET (Vishay Siliconix)

IRFR9014PBF Power MOSFET (IRF)

TAGS

IRFR9N20D N-Channel MOSFET INCHANGE

Image Gallery

IRFR9N20D Datasheet Preview Page 2

IRFR9N20D Distributor