Datasheet4U Logo Datasheet4U.com

IRFR9N20D - N-Channel MOSFET

IRFR9N20D Description

isc N-Channel MOSFET Transistor IRFR9N20D, IIRFR9N20D *.

IRFR9N20D Features

* Static drain-source on-resistance: RDS(on)≤380mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High frequency DC-DC converters
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME

IRFR9N20D Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRFR9N20D PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRFR9N20D
Manufacturer
INCHANGE
File Size
238.60 KB
Datasheet
IRFR9N20D-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRFR9N20DPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFR9010 - (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET (Samsung Electronics)
  • IRFR9012 - P-Channel Transistor (International Rectifier)
  • IRFR9014 - Power MOSFET (IRF)
  • IRFR9014PBF - Power MOSFET (IRF)
  • IRFR9020 - P-Channel Transistors (International Rectifier)
  • IRFR9022 - P-Channel Transistors (International Rectifier)
  • IRFR9024 - P-Channel MOSFET (Fairchild Semiconductor)

📌 All Tags

INCHANGE IRFR9N20D-like datasheet

IRFR9N20D Stock/Price