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IXFH22N65X2 N-Channel MOSFET

IXFH22N65X2 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH22N65X2 *.

IXFH22N65X2 Features

* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXFH22N65X2 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 44 A PD Total Dissipation 390 W Tj Operating Juncti

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Datasheet Details

Part number
IXFH22N65X2
Manufacturer
INCHANGE
File Size
319.61 KB
Datasheet
IXFH22N65X2-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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