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IXFH24N60X N-Channel MOSFET

IXFH24N60X Description

isc N-Channel MOSFET Transistor *.

IXFH24N60X Features

* Static drain-source on-resistance: RDS(on) ≤ 175mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% Avalanche Tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXFH24N60X Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IXFH24N60X
Manufacturer
INCHANGE
File Size
334.99 KB
Datasheet
IXFH24N60X-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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