IXFH24N90P Datasheet - IXYS Corporation

IXFH24N90P Polar Power MOSFET HiPerFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 24A 420mΩ 300ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°.

IXFH24N90P Features

* z z z z TAB TO-268 (IXFT) G S TAB G = Gate S = Source D = Drain TAB = Drain International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise speci

IXFH24N90P_IXYSCorporation.pdf