IXFH24N90P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N.

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Datasheet Specifications

Part number: IXFH24N90P
Manufacturer: IXYS Corporation
File Size: 141.15 KB
Datasheet: IXFH24N90P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* z z z z TAB TO-268 (IXFT) G S TAB G = Gate S = Source D = Drain TAB = Drain International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise speci

Applications

* z z V nA z z z 25 μA 2 mA 420 mΩ Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls VGS = 10V, ID = 0.5
* ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved DS100059(10/08) www. DataSheet. in IXFH24

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IXFH24N90P Polar Power MOSFET HiPerFET IXYS Corporation

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