* l l l l 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.13/10 6 4 IXYS advanced low Qg process International standard packages Low RDS (on) Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ
IXFH24N50Q Datasheet (134.05 KB)
IXFH24N50Q
IXYS Corporation
134.05 KB
Power mosfet.
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q
ID25
RDS(on).
📁 Related Datasheet
IXFH24N50 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH24N50 Power MOSFET (IXYS Corporation)
IXFH24N50S Power MOSFET (IXYS)
IXFH24N60X Power MOSFET (IXYS)
IXFH24N60X N-Channel MOSFET (INCHANGE)
IXFH24N65X2 N-Channel MOSFET (INCHANGE)
IXFH24N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFH24N90P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFH20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFH20N50P3 Power MOSFET (IXYS)
