IXFH24N80P Datasheet - IXYS Corporation

IXFH24N80P PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A RDS(on) ≤ 400 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC =.

IXFH24N80P Features

* D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1000 400 V V nA μA μA mΩ

IXFH24N80P_IXYSCorporation.pdf