IXFH24N80P Datasheet - IXYS Corporation

IXFH24N80P, PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID2.

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IXFH24N80P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH24N80P

Manufacturer:

IXYS Corporation

File Size:

175.01 KB

Description:

PolarHV HiPerFET Power MOSFET

Features

* D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1000 400 V V nA μA μA mΩ

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IXFH24N80P PolarHV HiPerFET Power MOSFET IXYS Corporation

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