IXFH24N80P - PolarHV HiPerFET Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXFH24N80P
Manufacturer	IXYS Corporation
File Size	175.01 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFH24N80P_IXYSCorporation.pdf

D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1000 400 V V nA μA μA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5.

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Published: May 30, 2011 |