IXFK360N10T Datasheet - INCHANGE

IXFK360N10T - N-Channel MOSFET

IXFK360N10T Features

* Drain Source Voltage- : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 2.9mΩ(Max)@VGS=10V

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-M

Datasheet Details

IXFK360N10T

INCHANGE

247.18 KB

N-channel mosfet.

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