Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK320N17T2 IXFX320N17T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 320A 5.2mΩ 150ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 2
Datasheet Details
Part number:
IXFK320N17T2
Manufacturer:
IXYS
File Size:
209.52 KB
Description:
Gigamos trencht2 hiperfet power mosfet.