IXFK320N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET

IXYS

Datasheet Details

Part number	IXFK320N17T2
Manufacturer	IXYS
File Size	209.52 KB
Description	GigaMOS TrenchT2 HiperFET Power MOSFET
Datasheet	IXFK320N17T2_IXYS.pdf

z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A,.

📁 IXFK320N17T2 Similar Datasheet

Other Datasheets by IXYS

Published: Jul 5, 2010 |