IXFK32N80P Datasheet - IXYS

IXFK32N80P Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 32N80P IXFX 32N80P VDSS ID25 RDS(on) trr = 800 V = 32 A ≤ 270 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω .

IXFK32N80P Features

* D = Drain Tab = Drain (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA

IXFK32N80P-IXYS.pdf