* D = Drain Tab = Drain (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA
IXFK32N80P Datasheet (153.12 KB)
IXFK32N80P
IXYS
153.12 KB
Power mosfet.
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 32N80P IXFX 32N80P
VDSS ID25
RDS(on) trr
= 800.
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