IXFK32N80P Datasheet - IXYS

IXFK32N80P, Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 32N80P IXFX 32N80P VDSS ID25 RDS(on) trr = 800.

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IXFK32N80P-IXYS.pdf

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Datasheet Details

Part number:

IXFK32N80P

Manufacturer:

IXYS

File Size:

153.12 KB

Description:

Power MOSFET

Features

* D = Drain Tab = Drain (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA

IXFK32N80P Distributors

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IXFK32N80P Power MOSFET IXYS

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