IXFK34N80 Datasheet - IXYS Corporation

IXFK34N80 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 34N80 IXFX 34N80 V.

IXFK34N80 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier Applications

IXFK34N80 Datasheet (48.10 KB)

IXFK34N80 Datasheet Preview — Preview of IXFK34N80 PDF

Datasheet Details

Part number:

IXFK34N80

Manufacturer:

IXYS Corporation

File Size:

48.10 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFK30N100Q2 Power MOSFET (IXYS Corporation)

IXFK30N50Q Power MOSFET (IXYS Corporation)

IXFK320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)

IXFK32N100P Power MOSFET (IXYS)

IXFK32N100Q3 Power MOSFET (IXYS)

IXFK32N100X Power MOSFET (IXYS)

IXFK32N50Q Power MOSFET (IXYS)

TAGS

IXFK34N80 Power MOSFET IXYS Corporation

IXFK34N80 Distributor