Part number:
IXFK34N80
Manufacturer:
IXYS Corporation
File Size:
48.10 KB
Description:
Power mosfet.
Datasheet Details
Part number:
IXFK34N80
Manufacturer:
IXYS Corporation
File Size:
48.10 KB
Description:
Power mosfet.
IXFK34N80, Power MOSFET
HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 34N80 IXFX 34N80 V
IXFK34N80 Features
* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Applications
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