* z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 50 2 0.40 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z D
IXFK30N100Q2 Datasheet (603.14 KB)
IXFK30N100Q2
IXYS Corporation
603.14 KB
Power mosfet.
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Q-Class
IXFK 30N100Q2 IXFX 30N100Q2
VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns
N-Channel.
📁 Related Datasheet
IXFK30N50Q - Power MOSFET
(IXYS Corporation)
HiPerFETTM Power MOSFETs
Q-Class
IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS ID25
500 V 3.
IXFK320N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET
(IXYS)
Advance Technical Information
..
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrins.
IXFK320N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET
(IXYS)
Advance Technical Information
..
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrins.
IXFK32N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK32N100P IXFX32N100P
Symbol VDSS VDGR VGSS VGSM I.
IXFK32N100Q3 - Power MOSFET
(IXYS)
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFK32N100Q3 IXFX32N100Q3
D
G S
Symbol
VDSS VDGR VGSS VGSM ID25.
IXFK32N100X - Power MOSFET
(IXYS)
Preliminary Technical Information
X-Class HiPerFETTM Power MOSFET
IXFT32N100XHV IXFH32N100X IXFK32N100X
VDSS = ID25 = RDS(on)
1000V 32A 220m
N-.
IXFK32N50Q - Power MOSFET
(IXYS)
HiPerFETTM Power MOSFETs
Q-Class
IXFK 32N50Q IXFX 32N50Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS ID25
500 V 32 A 500 V .
IXFK32N60 - HiPerFET Power MOSFET
(IXYS)
IXFK 32N60 IXFK 36N60
Preliminary Data
IXFN 32N60 .. IXFN 36N60
ID25 RDS(on) 0.18Ω 0.25Ω t rr 250ns 250ns
VDSS
HiPerFETTM Power MO.
