IXFK30N100Q2 Datasheet - IXYS Corporation

IXFK30N100Q2, Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns N-Channel.

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IXFK30N100Q2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFK30N100Q2

Manufacturer:

IXYS Corporation

File Size:

603.14 KB

Description:

Power MOSFET

Features

* z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 50 2 0.40 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z D

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IXFK30N100Q2 Power MOSFET IXYS Corporation

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