IXFK100N25 Datasheet - IXYS Corporation

IXFK100N25 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 100N25 IXFK 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 250 250 ± 20 ± 30 100 75 400 100 64 3 5 560 -55 +150 150 -5.

IXFK100N25 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXFK100N25 Datasheet (97.85 KB)

IXFK100N25 Datasheet Preview — Preview of IXFK100N25 PDF

Datasheet Details

Part number:

IXFK100N25

Manufacturer:

IXYS Corporation

File Size:

97.85 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFK100N10 Power MOSFET (IXYS Corporation)

IXFK100N65X2 Power MOSFET (IXYS)

IXFK102N30P Polar MOSFETs (IXYS Corporation)

IXFK105N07 HiPerFET Power MOSFETs (IXYS Corporation)

IXFK110N06 HiPerFET Power MOSFETs (IXYS Corporation)

IXFK110N07 HiPerFET Power MOSFETs (IXYS Corporation)

IXFK120N20 Power MOSFET (IXYS)

IXFK120N20P Power MOSFET (IXYS Corporation)

IXFK120N25 HiPerFET Power MOSFETs (IXYS)

IXFK120N25P Power MOSFET (IXYS)

TAGS

IXFK100N25 Power MOSFET IXYS Corporation

IXFK100N25 Distributor