IXFK110N06 Datasheet - IXYS Corporation

IXFK110N06 HiPerFET Power MOSFETs

www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limit.

IXFK110N06 Features

* International standard packages

* JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

IXFK110N06 Datasheet (191.08 KB)