IXFK140N20P Datasheet - IXYS

IXFK140N20P PolarHT HiPerFET Power MOSFET

Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 140N20P VDSS = 200 V ID25 = 140 A RDS(on) = 18 mΩ ≤ 150 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 2.

IXFK140N20P Features

* z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 10 g z International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS

IXFK140N20P_IXYS.pdf