IXFK140N30P Datasheet - IXYS

IXFK140N30P - Power MOSFET

PolarTM Power MOSFET HiPerFETTM IXFK140N30P IXFX140N30P N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = ID25 = ≤ RDS(on) t rr ≤ 300V 140A 24mΩ 200ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC =.

IXFK140N30P Features

* Fast intrinsic diode

* Avalanche Rated

* Low RDS(ON) and QG

* Low package inductance Advantages z Easy to mount z Space savings z High power density Applications

* DC-DC coverters

* Battery chargers

* Switched-mode and resonant-mode power sup

IXFK140N30P-IXYS.pdf